Small-Signal Modeling of SiGe HBTs Using Direct Parameter-Extraction Method
نویسندگان
چکیده
منابع مشابه
Direct extraction feature for scattering parameters of SiGe-HBTs
We present a direct approach to obtain scattering parameters (S-parameters) and other derived figures of merit of SiGe-HBTs by means of small-signal (ac) analysis. Therefore, an additional simulation mode has been implemented in the three-dimensional device simulator MINIMOS-NT. Several additional features are provided for efficiently obtaining various small-signal parameters. The accuracy of t...
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We present a comparison of several device parameters obtained by fully two-dimensional physical device simulation of several device parameters and measurements. Several features for direct extraction of either extrinsic or intrinsic (de-embedded) parameters sets from AC-simulation were implemented in the three-dimensional device simulator Minimos-NT [1]. The scattering parameters (S-parameters)...
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S. Bruce, A. Trasser, M. Birk, A. Rydberg and H. Schumacher. Uppsala University, Box 534, S-751 21 Uppsala, Sweden. University of Ulm, Abt. EBS, D-89069 Ulm, Germany. Abstract A novel method for finding the thermal time constant of HBTs is proposed. It utilizes small signal measurements in the frequency domain of the typical negative differential resistance found in the active region, i.e., nor...
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ژورنال
عنوان ژورنال: IEEE Transactions on Electron Devices
سال: 2006
ISSN: 0018-9383
DOI: 10.1109/ted.2006.881055